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FDS6984AS June 2005 FDS6984AS General Description Dual Notebook Power Supply N-Channel PowerTrench(R) SyncFETTM Features * Q2: Optimized to minimize conduction losses Includes SyncFET Schottky diode RDS(on) max= 20 m @ VGS = 10V RDS(on) max= 28 m @ VGS = 4.5V * Q1: Optimized for low switching losses Low gate charge (8nC typical) RDS(on) max= 31 m @ VGS = 10V RDS(on) max= 40 m @ VGS = 4.5V The FDS6984AS is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6984AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes a patented combination of a MOSFET monolithically integrated with a Schottky diode. 8.5A, 30V 5.5A, 30V D1 D1 D2 D2 S1 G1 5 6 7 Q1 4 3 2 Q2 SO-8 S2 8 1 G2 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage TA = 25C unless otherwise noted Parameter Q2 30 20 (Note 1a) Q1 30 20 5.5 20 2 1.6 1 0.9 -55 to +150 Units V V A W - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation Drain Current 8.5 30 (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 C/W C/W Package Marking and Ordering Information Device Marking FDS6984AS FDS6984AS (c)2005 Fairchild Semiconductor Corporation Device FDS6984AS FDS6984AS_NL (Note 4) Reel Size 13" 13" Tape width 12mm 12mm Quantity 2500 units 2500 units FDS6984AS Rev A(X) FDS6984AS Electrical Characteristics Symbol BVDSS IDSS TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Test Conditions VGS = 0 V, ID = 1 mA VGS = 0 V, ID = 250 A VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 125C Type Min Typ Max Units Q2 Q1 Q2 Q1 Q2 Q1 All 30 30 500 1 2.3 79 100 V A mA nA nA Off Characteristics IGSS Gate-Body Leakage (Note 2) VGS = 20 V, VDS = 0 V On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) gFS On-State Drain Current Forward Transconductance VDS = VGS, ID = 1 mA VDS = VGS, ID = 250 A ID = 1 mA, Referenced to 25C ID = 250 uA, Referenced to 25C VGS = 10 V, ID = 8.5 A VGS = 10 V, ID = 8.5 A, TJ = 125C VGS = 4.5 V, ID = 7 A VGS = 10 V, ID = 5.5 A VGS = 10 V, ID = 5.5 A, TJ = 125C VGS = 4.5 V, ID = 4.6 A VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 8.5 A VDS = 5 V, ID = 5.5 A VDS = 15 V, VGS = 0 V, f = 1.0 MHz Q2 Q1 Q2 Q1 Q2 1 1 Q1 1.7 1.8 -3 -4 17 24 21 26 34 32 3 3 V mV/C 20 32 28 31 43 40 m Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 30 20 25 18 530 420 170 120 60 50 3.1 2.2 A S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS = 15mV, f = 1.0 MHz pF pF pF FDS6984AS Rev A (X) FDS6984AS Electrical Characteristics Symbol td(on) tr td(off) tf td(on) tr td(off) tf Qg(TOT) Qg Qgs Qgd (continued) TA = 25C unless otherwise noted Parameter (Note 2) Test Conditions Type Min Typ Max Units Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 8 9 5 6 23 22 4 2 9 10 7 11 13 13 4 3 10 8 5 4 1.5 1.3 1.9 1.5 16 18 10 12 37 35 8 4 18 19 14 20 24 24 8 6 14 11 8 6 ns ns ns ns ns ns ns ns nC nC nC nC Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 15 V, ID = 1 A, VGS = 10V, RGEN = 6 VDD = 15 V, ID = 1 A, VGS = 4.5V, RGEN = 6 Total Gate Charge, Vgs = 10V Total Gate Charge, Vgs = 5V Gate-Source Charge Gate-Drain Charge Q2: VDS = 15 V, ID = 8.5 A Q1: VDS = 15 V, ID = 5.5 A Drain-Source Diode Characteristics and Maximum Ratings IS trr Qrr trr Qrr VSD Maximum Continuous Drain-Source Diode Forward Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Drain-Source Diode Forward Voltage IF = 10A, dIF/dt = 300 A/s IF = 5.5A, dIF/dt = 100 A/s VGS = 0 V, IS = 2.3 A VGS = 0 V, IS = 1.3 A 3.0 1.3 13 6 17 6 0.6 0.8 0.7 1.2 A ns nC ns nC V (Note 3) (Note 3) (Note 2) (Note 2) Q2 Q1 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78C/W when mounted on a 0.5in2 pad of 2 oz copper b) 125C/W when mounted on a 0.02 in2 pad of 2 oz copper c) 135C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. See "SyncFET Schottky body diode characteristics" below. 3. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 4. FDS6984AS_NL is a lead free product. The FDS6984AS_NL marking will appear on the reel label. FDS6984AS Rev A (X) FDS6984AS Typical Characteristics: Q2 30 VGS = 10V 3.5V 2 VGS = 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 25 ID, DRAIN CURRENT (A) 20 15 10 5 0 0 1.8 6.0V 4.5V 4.0V 1.6 3.5V 3.0V 1.4 4.0V 4.5V 5.0V 6.0V 10V 1.2 2.5V 1 0.8 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 3 0 5 10 15 20 ID, DRAIN CURRENT (A) 25 30 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.06 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 8.5A VGS = 10V ID = 4.25A 0.05 1.45 1.3 1.15 1 0.04 TA = 125oC 0.03 0.85 0.7 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0.02 TA = 25oC 0.01 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 30 VDS = 5V Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V 25 ID, DRAIN CURRENT (A) 20 15 TA = 125 C o IS, REVERSE DRAIN CURRENT (A) 10 1 TA = 125oC 25 C -55oC o -55 C o 0.1 10 5 0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 25oC 0.01 0.001 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) 1 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6984AS Rev A (X) FDS6984AS Typical Characteristics: Q2 10 VGS, GATE-SOURCE VOLTAGE (V) ID =8.5A 800 f = 1MHz VGS = 0 V 8 CAPACITANCE (pF) VDS = 10V 20V 600 Ciss 6 15V 400 4 Coss 200 2 Crss 0 0 2 4 6 8 Qg, GATE CHARGE (nC) 10 12 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics. 100 100s 50 Figure 8. Capacitance Characteristics. P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 1ms 10ms 100ms 1s 10s DC VGS = 10V SINGLE PULSE o RJA = 135 C/W TA = 25oC 40 ID, DRAIN CURRENT (A) 10 SINGLE PULSE RJA = 135C/W TA = 25C 30 1 20 0.1 10 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. FDS6984AS Rev A (X) FDS6984AS Typical Characteristics Q1 20 VGS = 10V 4.0V 4.5V 3.5V 2.4 VGS = 3.0V 16 ID, DRAIN CURRENT (A) 6.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 2 1.8 1.6 1.4 1.2 1 0.8 3.5V 4.0V 4.5V 5.0V 6.0V 10V 12 8 3.0V 4 2.5V 0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 3 0 5 10 ID, DRAIN CURRENT (A) 15 20 Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 0.1 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), ON-RESISTANCE (OHM) ID = 5.5A VGS = 10V ID = 2.75A 0.08 1.4 1.2 0.06 TA = 125oC 0.04 TA = 25 C 0.02 o 1 0.8 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 13. On-Resistance Variation with Temperature. 20 Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 16 ID, DRAIN CURRENT (A) VGS = 0V 10 1 TA = 125oC 12 0.1 25 C o 8 TA = 125 C 4 25oC 0 0.5 1.5 2.5 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4.5 o -55oC 0.01 -55oC 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6984AS Rev A (X) FDS6984AS Typical Characteristics Q1 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 5.5A 8 600 f = 1MHz VGS = 0 V 500 20V CAPACITANCE (pF) VDS = 10V 400 6 15V 4 Ciss 300 Coss 200 2 100 Crss 0 0 2 4 6 Qg, GATE CHARGE (nC) 8 10 0 0 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 17. Gate Charge Characteristics. 100 RDS(ON) LIMIT 100s 1ms P(pk), PEAK TRANSIENT POWER (W) 50 Figure 18. Capacitance Characteristics. ID, DRAIN CURRENT (A) 40 10 SINGLE PULSE RJA = 135C/W TA = 25C 10ms 100ms 1s 10s 30 1 DC 20 0.1 VGS = 10V SINGLE PULSE RJA = 135oC/W TA = 25 C o 10 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RJA(t) = r(t) * RJA RJA = 135C/W P(pk) t1 t2 SINGLE PULSE 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6984AS Rev A (X) FDS6984AS Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 22 shows the reverse recovery characteristic of the FDS6984AS. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. IDSS, REVERSE LEAKAGE CURRENT (A) 0.01 125oC 0.001 100oC 0.0001 3A/DIV 0.00001 25oC 0.000001 0 10 20 VDS, REVERSE VOLTAGE (V) 30 Figure 24. SyncFET body diode reverse leakage versus drain-source voltage and temperature. 10nS/DIV Figure 22. FDS6984AS SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 23 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6984A). 3A/DIV 0V 10nS/DIV Figure 23. Non-SyncFET (FDS6984A) body diode reverse recovery characteristic. FDS6984AS Rev A (X) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC Across the board. Around the world.TM OPTOPLANARTM PACMANTM The Power Franchise POPTM Programmable Active DroopTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I13 |
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